HIGH-VOLTAGE DIODE INCORPORATING PROVISION FOR ABRUPT RECOVERY OF REVERSE RESISTANCE Russian patent published in 2003 - IPC

FIELD: semiconductor pulse engineering; semiconductor current choppers. SUBSTANCE: high-voltage diode that may be used for final stages of high-voltage pulse generators operating in nanosecond range to function as inductive storage current choppers has two highly doped layers of reverse polarity of conductivity, two ohmic contacts for highly doped layers, and two slightly doped layers placed between highly doped layers, their polarities of conductivity being same as those of abutting highly doped layers; thickness of slightly doped p layer is greater than that of slightly doped n layer; p-n junction depth is not over 170 mm. EFFECT: reduced power loss in abrupt-recovery drift diode during recovery of reverse resistance. 1 cl, 4 dwg, 1 tbl