METHOD FOR CONTROLLING SATURATION OF TRANSISTOR GATE Russian patent published in 2000 - IPC

FIELD: power transistor gates using bipolar transistors. SUBSTANCE: method involves application and regulation of current from power supply units of power circuit and control circuit of transistor gate. Simultaneously with application of direct current to control circuit, method involves regulated application of alternating current to control circuit using minimal possible amplitude to provide reliable detection of this constituent in background noise. Then, method involves measurement of total alternating current constituents in control circuit and power circuit of transistor gate, and comparison of their ratio to reference value, which is equal to ratio of voltage levels of power supply units in power circuit and control circuit. Saturation mode is detected by result. This results in on-line monitoring of shift of working mode of transistor gate in gate or active mode outside of point, which is defined as boundary between gate and active modes, so that even short-term exit of power transistor gate within active mode out of saturation is detected. EFFECT: increased functional capabilities. 1 dwg