FIELD: electronic equipment. SUBSTANCE: device may be used for element-to-element connection of high-frequency microchips. All microchip members with backward out-of-chip RF selectivity, including differential functional units, transmission lines and out-of-chip filters, are connected using structure, which provides compensation of parasitic capacitance, which is caused by different differential elements of microchip. Said structure has layer of differential generation and reception circuits. Circuits are connected to end terminal plates, which are located in close proximity, by means of differential transmission lines, which are also located in close proximity at some piece of their run. Each transmission line has constant characteristic impedance and compensated capacitance with respect to ground. Both transmission lines use shared grounding board. Second layer, which has backward element-to-element connection to first layer, has RF functional unit, in particular, filter or delay line. EFFECT: decreased cross-talk signal in backward RF connections. 10 cl, 12 dwg
