METHOD FOR PURIFICATION OF METALLURGICAL SILICON Russian patent published in 2018 - IPC C01B33/37 C22B9/05 

Abstract RU 2645138 C1

FIELD: metallurgy.

SUBSTANCE: method of purification of metallurgical silicon includes tapping silicon melt from the furnace, purifying silicon melt in a ladle with overheated steam at the temperature 120-400°C in a mixture with compressed air fed through porous plugs in the ladle bottom at steam-to-compressed air ratio 1:8-1:30 at silicon temperature 1500-1760°C. The number of points for supplying steam-air mixture to the bucket can be from one to four.

EFFECT: improved quality of silicon due to reduction of calcium, phosphorus, boron, iron in silicon.

5 cl, 1 tbl, 8 ex

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RU 2 645 138 C1

Authors

Nepomnyashchikh Aleksandr Iosifovich

Eliseev Igor Alekseevich

Elkin Konstantin Sergeevich

Dates

2018-02-15Published

2016-12-16Filed