METHOD OF MONOCRYSTALS GROWING FROM A MELT Russian patent published in 2004 - IPC

FIELD: technologies of monocrystals growing from a melt.

SUBSTANCE: the invention is dealt with technologies of monocrystals growing from a viscous melts of refractory oxides by Chokhralsky's method for production of volumetric profiled monocrystals with a high degree of perfection of their structure. Substance of the invention: in the method of monocrystal growing from melts of refractory oxides using a seed-crystal by Chokhralsky's method, growing is conducted from a heater mounted in a king-pot and made out of sections assembled from U-shaped lamellas bent in the form of a bowl following the internal form of the crucible. The oriented faces of the seed crystal are placed between sections of the heater and the number of sections of the heater corresponds to the number of faces of the seed crystal. The method allows to increase output of monocrystals with qualitative structures, to increase a size of the loading charge and to produce large-sized monocrystals, to reduce power consumption and consumption of the initial expensive high-purity materials per a unit of products.

EFFECT: the invention allows to increase output and size of monocrystals with qualitative structures, to reduce power and initial expensive high-purity materials consumption.

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