METHOD FOR POWER AMPLIFICATION ON GaN MICROWAVE TRANSISTORS AND PULSED MICROWAVE POWER AMPLIFIER Russian patent published in 2013 - IPC H03F3/32 

FIELD: radio engineering, communication.

SUBSTANCE: pulsed microwave power amplifier on GaN microwave transistors includes input and output summation microstrip bridges, in the branches of which there are GaN microwave transistors whose gates are connected to a voltage stabiliser and the drains are connected to a high-speed pulse modulator, having a power commutator switch on a GaN power transistor with a high-speed driver which connects the drain of the GaN microwave transistors to a storage capacitor, a power discharge switch on a power GaN transistor with a high-speed driver, which facilitates discharge of the capacitances of the GaN microwave transistors after disconnecting the commutator switch and the pulse-width modulation power supply, a discharge switch on a power GaN transistor with a high-speed driver, which enables to disconnect the storage capacitor and the drain of the GaN microwave transistor from the pulse-width modulation power supply with output voltage of 5-45 V and connect the storage capacitor to the pulse-width modulation power supply when disconnecting the supply voltage from the drains of the GaN microwave transistors using the commutator switch.

EFFECT: low phase noise in the output microwave signal.

4 cl, 5 dwg