INTEGRATED BROADBAND MICROWAVE ITEM Russian patent published in 2004 - IPC

FIELD: microwave engineering; integrated broadband microwave items.

SUBSTANCE: integrated microwave item has amplifier built around microstrip components in the form of aggregate of series-connected stages each incorporating parallel-connected field-effect transistors and coupling capacitors disposed between adjacent stages; in addition matching circuits are disposed in gate and drain circuits of each field-effect transistor; these circuits are set up of series-connected inductance coil and adjustable capacitor, their ratings being chosen to ensure minimal reflection in frequency band over 30%; quarter-wavelength stubs are shorted out through ground and their open ends are connected to matching circuits related to gates of field-effect transistors at points between inductance coil and adjustable capacitor. Proposed design of integrated item has been tested by manufacturer. Tests have shown that practically all transistors arriving for assembly can be adjusted in the course of manufacture and their yield amounts to 100%. Band width in all produced integrated items is over 45%.

EFFECT: enhanced band width and reduced process losses in integrated item manufacture.

1 cl, 3 dwg