MEMORY LOCATION OF STATIC RAM Russian patent published in 2002 - IPC

Abstract RU 2188465 C2

FIELD: computer engineering. SUBSTANCE: memory location has bistable (BIMOS) transistor, two resistors, two bit buses, and two word buses. Proposed location is capable of suffering heavy currents in OFF-state for long time. EFFECT: enhanced reliability of memory location. 9 cl, 2 dwg

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RU 2 188 465 C2

Authors

Gossner Kharal'D

Ajzele Ignats

Vittmann Frants

Ramgopal Rao Valip

Dates

2002-08-27Published

1996-09-16Filed