METHOD FOR SELECTIVE PROGRAMMING OF NONVOLATILE MEMORY Russian patent published in 2001 - IPC

Abstract RU 2162255 C2

FIELD: computer engineering. SUBSTANCE: method involves application of negative programming voltage to all word buses (WL_i,WL_j) followed by application of positive voltage to all non-selected word buses (WL_j) to compensate for negative charges across them. EFFECT: reduced power requirement. 3 cl, 2 dwg

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RU 2 162 255 C2

Authors

Georg Tempel'

Dates

2001-01-20—Published

1996-05-13—Filed