INTEGRATED SEMICONDUCTOR LASER-AMPLIFIER Russian patent published in 1998 - IPC

FIELD: quantum electronics, high-power single-mode and/or single-frequency high-coherent radiation sources used to pump solid or fibre lasers, design of laser radiation sources in visible region of spectrum thanks to generation of second harmonic in nonlinear optical crystals. SUBSTANCE: integrated semiconductor laser-amplifier incorporates master laser and optical amplifier. Its radiation lead-out is spread over surface of optical amplifier in specified order. Each lead-out means is fabricated in the form of recess of certain depth with reflector on one of its boundaries and region transparent for extraction of radiation arranged in path of reflected extracted signal which provide for extraction of portion of amplified radiation and for passage of remaining portion of it for its further amplification in next amplification region pumped with injection current. EFFECT: enhanced functional efficiency of proposed laser-amplifier. 16 cl, 8 dwg