SEMICONDUCTOR LASER Russian patent published in 1998 - IPC

FIELD: quantum electronics, single-mode and/or single- frequency high-coherent high-power radiation sources used to design laser radiation source in visible region of spectrum. SUBSTANCE: proposed semiconductor laser includes strip active generation region with reflectors of optical resonator, for example of Fabry-Perot type, radiation leads are distributed over surface of strip active generation region in specified order and each extractor is manufactured in the form of recess of certain depth with reflectors on both its faces transparent for extraction of radiation of region located in path of reflected extracted signals which provide for both extraction of portion of generated radiation and for passage of its remaining portion for its further amplification in next region pumped with injection current. Thanks to usage of several versions of making of same recesses it becomes possible to manufacture devices with sectional resonators as well as lasers operating under mode of synchronization. EFFECT: expanded application field, improved operational characteristics. 22 cl, 8 dwg