FIELD: recording of ionizing radiation by diamond detectors. SUBSTANCE: process of manufacture of diamond detectors is based on use of natural diamonds with content of nitrogen not more than 1018 atm/cu cm. In correspondence with process crystals with life time of charge carrier in the order of 10-9 s are selected, slit into plates with thickness of 0.2-0.3 mm, plates are etched by oxygen of air in the course of several minutes at temperature 800-900 C, metal contacts are deposited on opposite sides of plate, plates are irradiated by electron flux at temperature below 20 C and parameters of detector are determined in process of irradiation. Crystals with nitrogen content not more than 1019 atm/cu cm are etched by oxygen of air in the course of several minutes at temperature 800-900 C prior to operation of slitting, are irradiated by electron flux with energy 24.0 keV. In process of irradiation presence of one maximum on wave length 420 nm or two maxima on wave lengths 420 and 520 nm are found in spectrum of glow. Depending on it crystal is additionally slit into plates with thickness 0.2-0.7 mm. Before deposition of metal contacts test irradiation of plates by electron flux with energy 24.0 keV is conducted, surfaces of plate are additionally treated with ions, silicon dioxide with thickness of is sputtered on one side of plate and tantalum with thickness of is sputtered on the other side. This process is followed by firing in vacuum. EFFECT: manufacture of predicted and modeled detectors of various types with reproduced parameters and certain specified optimum operational modes. 1 tbl
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Authors
Dates
2001-05-20—Published
2000-05-24—Filed