DETECTOR OF IONISING RADIATIONS Russian patent published in 2010 - IPC G01T1/24 

FIELD: physics.

SUBSTANCE: in solid-state detector of ionising radiations, comprising semiconductor substrate with ohm contact to its rear side, with semiconductor layer arranged on its front side as isotopic to substrate, with semiconductor high-ohm layer arranged on this layer, with a layer of conductivity type that is opposite to substrate arranged on high-ohm layer and contact layer arranged on the latter, - besides the last two layers are arranged in the form of galvanically non-related areas, - additionally a microstructured layer of diamond C* is added as weakly alloyed with acceptors and arranged on above mentioned contact layer, and the second contact layer arranged on face side of specified diamond microstructured layer.

EFFECT: improves sensitivity of detector.

3 dwg