POWER AMPLIFIER AND METHOD IMPLEMENTED BY THIS AMPLIFIER Russian patent published in 2001 - IPC

Abstract RU 2168262 C1

FIELD: power amplifiers using input-signal control facilities to limit temperature of circuit components. SUBSTANCE: amplifier circuit has at least one transistor 21, 22 for amplifying input signal and generating output signal, facility 26 for controlling input signal arriving at input lead, and facility 25 for generating control signal which actually follows up temperature of at least one transistor within at least selected temperature range. Facility 26 controls input signal so that it cannot exceed preset level. The latter corresponds to preset temperature of at least one transistor which is equal to or lower than definite maximal temperature specified for at least one transistor. EFFECT: enhanced economic efficiency. 19 cl, 19 dwg

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RU 2 168 262 C1

Authors

Nordvall' Tomas Jan Peter

Dates

2001-05-27Published

1998-04-03Filed