FIELD: semiconductor engineering. SUBSTANCE: method consists in preparing starting material, growing crystal at inert gas pressure, and heat treatment in saturated zinc vapors. According to invention, starting material for crystal growth are particles 0.1 to 2.0 mm in size mechanically activated by crushing preliminarily grown in oxygen-containing medium tellurium-activated zinc selenide crystals with tellurium content 0.5-1.0 wt %. Resultant crystals show light yield values from 0.7 to 0.9 relative units (against 0.6-1.0 in standard conditions), afterglow level 0.04-0.05% (0.05%) after 2 months, and light decay time 2.5-3 mcs (100 mcs). EFFECT: improved physical characteristics. 1 tbl, 9 ex
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