FIELD: semiconductor engineering. SUBSTANCE: semiconductor crystal is grown from melt at inert gas pressure and exposed to heat treatment in saturated zinc vapors. Starting material for crystal growth are particles 0.1 to 2.0 mm in size mechanically activated by crushing preliminarily grown zinc selenide crystals. Resultant crystals show resistivity 0.05 Ohm.cm. EFFECT: improved process feasibility and eliminated safety and size restrictions. 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PREPARING TELLURIUM-ACTIVATED ZINC SELENIDE-BASED SCINTILLATOR | 2000 |
|
RU2170292C1 |
| METHOD FOR PREPARING CRYSTALS OF CHALCOGENIDES OF AB-TYPE | 1991 |
|
RU2031983C1 |
| METHOD OF MANUFACTURING OPTICAL MATERIALS FROM ZINC AND CADMIUM HALCOGENIDES | 2002 |
|
RU2240386C2 |
| CRYSTALLINE MATERIAL FOR ACTIVE ELEMENTS OF TUNEABLE LASERS BASED ON CHROMIUM-DOPED ZINC SELENIDE | 2010 |
|
RU2531401C2 |
| METHOD FOR CREATION OF CONTACT LAYERS ON AB-TYPE SEMICONDUCTOR OPTIC CRYSTAL SURFACES | 1989 |
|
RU1725700C |
| METHOD OF GROWING MONOCRYSTALS OF ZINC OR CADMIUM CHALCOHENIDES, SOLID SOLUTIONS ON THEIR BASE AND APPARATUS FOR PERFORMING THE METHOD | 1990 |
|
RU2030489C1 |
| METHOD AND DEVICE FOR HEAT TREATMENT OF SEMICONDUCTOR COMPOUNDS II - VI AND SEMICONDUCTORS SUBJECTED TO HEAT TREATMENT USING THIS METHOD | 2002 |
|
RU2238603C2 |
| METHOD FOR ALLOYING ZINC SELENIDE CRYSTALS WITH CHROMIUM | 2020 |
|
RU2751059C1 |
| STEPANOV'S METHOD OF SEEDING IN PROFILE CORUNDUM MONOCRYSTAL GROWING | 1987 |
|
RU1503355C |
| 0 |
|
SU681626A1 |
