FIELD: integrated microelectronics structures; integrated locations of static memory and random-access memory of computers. SUBSTANCE: random-access memory has bistable locations of avalanche transistors, p- type control MOS transistor, bit and word buses, n-type read-out MOS transistor, and current generator. Memory operates in micropower mode of static power consumption (units-tens of nanowatt). EFFECT: adequate noise immunity, enhanced operating frequencies. 2 cl, 8 dwg
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Authors
Dates
2003-03-10—Published
1999-10-29—Filed