SUPERHIGH-SPEED SUPERINTEGRATED LARGE-SCALE METAL-OXIDE-SUPERCONDUCTOR RANDOM-ACCESS MEMORY BUILT AROUND AVALANCHE TRANSISTORS Russian patent published in 2003 - IPC

Abstract RU 2200351 C2

FIELD: integrated microelectronics structures; integrated locations of static memory and random-access memory of computers. SUBSTANCE: random-access memory has bistable locations of avalanche transistors, p- type control MOS transistor, bit and word buses, n-type read-out MOS transistor, and current generator. Memory operates in micropower mode of static power consumption (units-tens of nanowatt). EFFECT: adequate noise immunity, enhanced operating frequencies. 2 cl, 8 dwg

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RU 2 200 351 C2

Authors

Bubennikov A.N.

Zykov A.V.

Dates

2003-03-10—Published

1999-10-29—Filed