COMPOSITE PLANAR SILICON-ON-INSULATOR NEUROSTRUCTURE FOR ULTRALARGE INTEGRATED CIRCUITS Russian patent published in 2001 - IPC

FIELD: integrated semiconductor microelectronics and silicon nanoelectronics; neuron-like structures for large-scale integrated circuits and computers. SUBSTANCE: neurostructure has in its base heavily doped central p⁺ region with p layer on its top whose conductivity is close to inherent conductivity of semiconductor; this layer separates near-surface p⁺ region and p⁺ regions of common central composite drain with respective electrodes as well as p⁺ regions of first and second source with respective electrodes; it also has first and second gates deposited on insulator layer under gate and formed on respective slightly doped separating p- regions of p⁺ source and p⁺ regions of drain; central p⁺ region in structure base is surrounded on two sides with adjacent heavily doped p⁺ regions and mounted on bottom insulator layer; first and second gates are made in the form of floating drains with second thin insulator layer deposited on each of them; formed on second insulator layer are n input contacts insulated from each other and from central absorbing electrode; input contacts have respective contact pads and their capacitance relative to floating gate determines weighted values and form weighted addition function by adding charges across floating gate of neurostructure with respective threshold function; each pair of respective input contacts is interconnected. In addition, either majority or minority carriers are free to move in composite slightly doped channels from structure base to its composite central drain depending on voltage across floating electrodes during implementation of weighted addition function by adding charges across floating electrodes when weights depend on capacitances of respective input contacts relative to this gate to transmit information to output contact of source common for neurostructure. EFFECT: enlarged functional capabilities of structure; greatly reduced number of communication links between parts; enhanced packing density and speed. 2 cl, 3 dwg