HIGH-SPEED LOW-VOLTAGE BIPOLAR GATE BUILT AROUND COMPLEMENTARY STRUCTURES Russian patent published in 2001 - IPC

FIELD: devices and integrated- circuit structures in pulse and digital engineering. SUBSTANCE: proposed logical element (NOT, NOR gate) built around complementary structures is designed for use in large-scale integrated circuits, computers, automatic-control devices, and the like where low-voltage power and logic drop at voltages ranging between 0.12 and 0.2 V are required. Gate having small number of components can be used for dense planar and three-dimensional ultrahigh-speed large-scale integrated circuits. Low- voltage gate has parallel-connected complementary pairs of n-p-n and p- n-p transistors whose emitters are interconnected, bases and collectors are integrated and function, respectively, as inputs and output of gate. Base of each symmetrical n-p-n and p-n-p transistor is made of slightly-doped (or non-doped, self-concentrated) semiconductor. Provision is made for ultra- high-speed, trouble-free operation of parallel-connected bipolar push-pull complementary inverters (1, 2, Еn) in micropower mode at super-low supply voltages and logic drop down to 0.12-015 V when using orthogonal symmetrical bipolar complementary structures sufficient for such functioning which are scaled to deep sub-micron (nano-micron <100) horizontal and vertical dimensions. EFFECT: enhanced speed, reduced working area, super-low supply voltage requirement. 5 cl, 9 dwg