SEMICONDUCTOR INVERTER Russian patent published in 2001 - IPC

FIELD: electrical engineering; low- voltage heavy-current rectifiers. SUBSTANCE: semiconductor inverter used, for example, in rectifiers for gallium and cadmium electrolysis, electrochemical metal treatment lines, and electroplating engineering has transformer unit and semiconductor diodes. Novelty is that transformer unit is assembled of three single-phase transformers each incorporating at least one toroidal magnetic core, primary winding connected to supply mains, and secondary windings wound on diodes. Each secondary winding has at least one turn built of one vertical and one horizontal members. Vertical member of this turn is embraced by toroidal magnetic core. Horizontal members of secondary windings of all three transformers are made of rigid buses and function as inverter base. Such design provides for reduction of switching-circuit inductive reactance and resistance of transformer windings and secondary taps thereby reducing installed capacity of inverter and loss in ac distribution line. EFFECT: reduced internal voltage drop of inverter, facilitated retrofitting of operating plants. 2 cl, 1 dwg