SEMICONDUCTOR RECTIFYING GATE Russian patent published in 1997 - IPC

FIELD: semiconductor instruments, in particular, heavy-power rectifiers for power supply of electrolytic devices in nonferrous metallurgy and chemical industry. SUBSTANCE: device has semiconductor wafer gate which is locked by means of cross-arm with bolts between bases of two coolers, which are designed as rib collectors which leaves base. In addition device has fuses and insulation panels which protect ribs of coolers. Cooler which is locked with semiconductor wafer gate on side of cross-arm has two additional ribs which are parallel to base and covers ribs of cooler which leave collector in side which is opposite to base. Fuses are located on additional ribs and have flanges which cover slit between additional ribs. This results in possibility to decrease temperature of fuses. EFFECT: increased reliability, decreased weight and size, increased repair capabilities. 1 dwg