FIELD: measurement technology, determination of distribution of components of thin-film structures. SUBSTANCE: thin film is applied to substrate, metal diaphragm with hole is superimposed on thin film, substrate with diaphragm is placed into mass spectrometer, time spectrum of secondary ions is read and distribution of components of thin film by depth of etching is determined. Thin film in the form of round spot is so superimposed that diaphragm is positioned in center of hole and diameter of spot is found from certain condition. EFFECT: enhanced accuracy in determination of distribution of components of thin films. 1 cl, 1 dwg
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