FIELD: measurement technology, measurement of parameters of semiconductor devices. SUBSTANCE: device is supplemented with generator of pulses of collector voltage. Controlling input of generator of pulses is connected to starting terminal and its output is coupled to terminal for connection of collector of transistor and counting input of counter. Input of circuit forming two reference voltages is connected to output of source of constant emitter current. EFFECT: increased accuracy of measurement of thermal resistance of junction-package of transistor. 2 dwg
