METHOD OF DETERMINING CURRENT LOCALIZATION VOLTAGE IN POWERFUL HF AND UHF BIPOLAR TRANSISTORS Russian patent published in 2017 - IPC G01R31/26 H01L21/66 

FIELD: measuring equipment.

SUBSTANCE: invention relates to measuring limit parameters of powerful bipolar transistors and can be used at the inlet and outlet control of their quality. Disclosed method is based on using the effect of increasing the curvature of voltage dependence on an emitter junction of a powerful bipolar transistor at constant emitter current on collector voltage when the collector voltage approaches the current localization voltage. Controlled transistor is connected as per the diagram with a common base, direct emitter current is set, the controlled transistor collector is supplied with voltage representing the sum of a linearly increasing voltage not exceeding the maximum allowable value for this type of transistors at the set current and a low sinusoidal voltage with a voltage on the collector close to zero, determined is an amplitude of the variable component of voltage on the controlled transistor emitter and then determined are values of voltage on the controlled transistor collector, at which the amplitude of the variable component of voltage on the controlled transistor emitter becomes equal to and respectively, where k1 and k2 are preset factors of exceeding the initial amplitude, , herewith k2>k1, and the unknown voltage of current localization is calculated as per the proposed calculation formula.

EFFECT: invention provides higher accuracy of determining current localization voltage in powerful HF and UHF bipolar transistors in a single measurement.

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