INTEGRATED PRESSURE TRANSDUCER Russian patent published in 2002 - IPC

FIELD: measurement technology; semiconductor transducers for measuring mechanical stresses. SUBSTANCE: integrated pressure transducer is assembled on single substrate and has membrane-style console with supporting base around it, as well as semiconductor member recording externally applied force. Semiconductor member is made in the form of photodiode and mounted on supporting base. Distance between semiconductor spatial charge area and edge of supporting base adjacent to loose end of console is shorter than diffusion length of semiconductor charge carriers. Passive light-emitting member such as phosphor droplet is provided on outer surface near console edge opposite photodiode; active light emitter such as light- emitting diode is mounted on outer surface of supporting base on other side of photodiode. Upper planar part of photodiode is shielded by light-proof coating. EFFECT: enhanced threshold sensitivity and resolution which enables using transducer for measuring blood pressure and pulse. 2 dwg