VARICAP BASED ON METAL-DIELECTRIC-SEMICONDUCTOR SYSTEM Russian patent published in 2013 - IPC H01L29/92 

FIELD: electrical engineering.

SUBSTANCE: invention can be used for development of varicaps based on metal-dielectric-semiconductor (MDSC) system purposed for frequency and phase control of variable signal in wireless devices of HF and SHF ranges. In the varicap based on MDSC system containing semiconductor with n-type conductance, dielectric, gating electrode and sink node of minority carriers with p-n-junction the p-region of sink node of minority carriers with p-n-junction has depth equal to thickness of the semiconductor; it is made in the form of cylindrical layer and part of initial semiconductor with n-type conductance is located inside this layer and connected to the gating electrode.

EFFECT: possibility to use a varicap as a capacitive switch.

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