FIELD: electricity.
SUBSTANCE: varicap contains semiconductor with thickness less than width of spatial charge areas, dielectric, control electrode, drain for minority carriers with p-n-p diode and contact to semiconductor. Under contact to semiconductor, in the area of drain elements localisation the layer of supplementary dielectric is formed.
EFFECT: varicap of suggested structure can be used both as adjustment and switching element in broad class of HF and SHF devices.
2 dwg
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