PROCESS OF MANUFACTURE OF MIS INTEGRATED CIRCUITS Russian patent published in 1997 - IPC

FIELD: integrated microelectronics, design and manufacture of single-channel and mutually complementary MIS integrated circuit for digital, linear and analog usage. SUBSTANCE: process of manufacture of MIS integrated circuits is based on sequential formation of gates and separating regions between drains and guarding zones in layers of silicon nitride and polycrystalline silicon, on removal of silicon nitride from separating regions between drains and guarding zones, on thermal oxidation , on removal of silicon nitride, on opening of contact windows to diffusion regions and on formation of interconnection with metal. EFFECT: increased output of good integrated circuits, their improved resistance to external effects thanks to planation of structure and high concentration of impurity in regions of guarding zones. 8 dwg