SEMICONDUCTOR LASER Russian patent published in 2010 - IPC H01S5/65 

FIELD: physics.

SUBSTANCE: semiconductor laser has a heterostructure in form of a thin plane-parallel plate, two mirrors which form an optical resonator having an optical axis and lying on both sides of the heterostructure, and pumping apparatus. Using the pumping apparatus, a volume is excited in the heterostructure, having a dimension along the axis of the resonator which is considerably smaller than across the axis of the resonator. The optical resonator has at least one extra absorbing layer in which nonequilibrium-carrier recombination takes place. The extra absorbing layer lies perpendicular the optical axis in the resonator mode unit, whose wavelength lies on the maximum of the spectrum of optical amplification of the heterostructure. Said absorbing layer absorbs spontaneous radiation propagating at an angle to the optical axis outside the fundamental mode of the resonator.

EFFECT: increase in power of the laser owing increase in cross dimensions of the excitation region.

32 cl, 1 dwg