ACTIVE ELEMENT OF SOLID STATE LASER WITH CROSSWISE ELECTRON-BEAM PUMP Russian patent published in 2010 - IPC H01S5/10 

FIELD: electrical engineering.

SUBSTANCE: proposed active element comprises heterostructure built around semiconductor compounds selected from groups A₂B₆ or A₃B₅. Active structure is arranged between upper and lower limiting semiconductor layers that make, together with active structure, an optical waveguide. Said active structure comprises at least two alternating superfine semiconductor layers with different refraction factors and at least one active layer arranged between aforesaid two layers that has higher refraction factor than that of alternating layers. Note here that upper and lower limiting layers have higher refraction factor compared with layers of active structure. Thickness h of upper limiting layer satisfies the condition h<x, where x is the depth of electron beam penetration into active structure. Outer surface of upper limiting layer has corrugated relief with direction of corrugations perpendicular to active element optical axis. Note here that relief spacing equals whole number of half-waves of laser radiation in active layer material. Note also that corrugation depth does not exceed height h of upper limiting layer.

EFFECT: higher output power.

3 cl, 4 dwg, 1 ex