SEMICONDUCTOR COMPONENT WITH PASSIVATING LAYER Russian patent published in 2002 - IPC

Abstract RU 2195048 C2

FIELD: capacitance-type fingerprint transducers. SUBSTANCE: component with passivating layer has at least two double passivating layers, uppermost one of uniform thickness being applied to leveled upper surface of underlayer. Each double passivating layer has two layers of different insulating materials such as silicon oxide and silicon nitride which ensures reliable passivation. EFFECT: enlarged functional capabilities. 4 cl, 2 dwg

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RU 2 195 048 C2

Authors

Viller Jozef

Fon Basse Paul'-Verner

Shajter Tomas

Dates

2002-12-20Published

1999-07-01Filed