METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT WITH INTERCONNECTIONS PARTIALLY MADE IN SUBSTRATE AND SEMICONDUCTOR COMPONENT MANUFACTURED BY THIS METHOD Russian patent published in 2003 - IPC

Abstract RU 2214649 C2

FIELD: manufacture of protected integrated circuits. SUBSTANCE: method for producing semiconductor component with its connections at least partially made in substrate includes making at least one connection inside semiconductor substrate and at least one connection on the latter. Semiconductor component manufactured by this method is capable of withstanding unwanted outside manipulations. EFFECT: enhanced reliability of protection against outside manipulations. 12 cl, 7 dwg

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RU 2 214 649 C2

Authors

Braun Khel'Ga

Kakoshke Ronal'D

Shtokan Regina

Plaza Gunter

Kuks Andreas

Dates

2003-10-20Published

1999-11-11Filed