SEMICONDUCTOR HAVING LARGE FRACTION OF MIDDLE- ORDER MATERIAL Russian patent published in 2003 - IPC

Abstract RU 2197035 C2

FIELD: manufacture of semiconductor devices. SUBSTANCE: high-quality non-monocrystal silicon alloy material incorporates regions of silicon alloy middle-order material but does not include volume percent required to form percolation channel inside material. Remaining part of material is either amorphous or mixture of amorphous and monocrystal materials. EFFECT: provision for checking local order of semiconductor that has useful properties differing from amorphous and crystalline states. 17 cl, 7 dwg

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RU 2 197 035 C2

Authors

Ovshinski Stehnford R.

Gukha Subkhendu

Jang Chi-Chung

Deng Ksunming

Dzhouns Skott

Dates

2003-01-20Published

1997-12-11Filed