PHOTOELECTRIC CELLS WITH TREATED SURFACES AND USE THEREOF Russian patent published in 2013 - IPC H01L31/05 

FIELD: physics.

SUBSTANCE: photoelectric cell according to the invention has a monolithic unit of a plurality of semiconductor photoelectric cells, each having at least one p-type or n-type diffusion doped region; a structured dielectric coating applied on at least one p-type or n-type diffusion doped region, wherein structures on said structured dielectric coating reduce the contact area between the metal layer and the doped regions in order to reduce recombination loss of photogenerated carriers in the plurality of semiconductor photoelectric cells; and a metal layer lying on the boundary surface between cells in the plurality of semiconductor photoelectric cells. A method of producing photoelectric cells with reduced recombination loss of photogenerated carriers is also disclosed.

EFFECT: efficiency of conversion.

22 cl, 27 dwg