METHOD OF MAKING OHMIC CONTACTS IN THIN-FILM DEVICES ON AMORPHOUS UNDOPED SEMICONDUCTORS Russian patent published in 2010 - IPC H01L21/28 

FIELD: physics, semiconductors.

SUBSTANCE: invention relates to electronic engineering and can be used in making ohmic contacts in thin-film field-effect transistors, memory elements, solar cells based on undoped amorphous hydrogenated silicon or other amorphous semiconductors. The method of making ohmic contacts in thin-film devices on undoped amorphous semiconductors involves depositing a semiconductor film onto a substrate, formation of a masking dielectric layer, photolithography for opening windows in the dielectric layer and sputtering metal electrodes with subsequent photolithography on the metal. Immediately before sputtering the metal electrodes, the semiconductor film undergoes ion bombardment with inert gas ions, e.g. argon, through windows opened in the dielectric layer.

EFFECT: method avoids thermal annealing at hydrogen effusion temperature, which may affect electrophysical parametres of the film of amorphous semiconductor, and enables formation of a "broken" layer on the metal-semiconductor junction to create surface ohmic contacts to film-type undoped amorphous semiconductors.

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