CRYSTAL GROWING APPARATUS AND METHOD Russian patent published in 2003 - IPC

FIELD: crystal growing equipment. SUBSTANCE: apparatus has crystallizer for storing charge of molten material from which crystal may be grown, and first reflector for receiving radiation oriented along entrance path and reflecting radiation toward second reflector, which reflects output radiation along exit path. First and second reflectors are arranged on or adjacent to molten material surface so that during crystal growing process reflectors are maintained in substantially permanent position with respect to molten material surface. Apparatus may be equipped with single crystallizer or with two crystallizers. In apparatus with two crystallizers, supporting device may be used as second internal crystallizer containing molten material, which is in fluid communication through liquid channel with molten material in first crystallizer. Apparatus may be further equipped with image processing device for forming crystal image or any part of growth surface portion and for measuring crystal diameter or for measuring diameter of meniscus during growing process. Apparatus may be further provided with crystal growth regulating device for regulating crystal growth extent depending on measured diameter of crystal or crystal meniscus region. EFFECT: increased efficiency and improved precision of crystal growth control. 24 cl, 6 dwg