FIELD: material science; manufacture of semiconductor devices. SUBSTANCE: material surface is treated under modulated Q- factor conditions by irradiating surface with laser beam focused in line whose length l is commensurable with surface height and scanning this surface at beam oscillation frequency not over 100 Hz chosen from equation  , where Q is total energy density of laser beam acting on material surface; σ is surface cohesion force. Proposed method provides for surface treatment without subjecting it to heat or changing surface morphology. EFFECT: reduced amount (concentration) of fused areas on surface. 1 cl, 1 dwg
, where Q is total energy density of laser beam acting on material surface; σ is surface cohesion force. Proposed method provides for surface treatment without subjecting it to heat or changing surface morphology. EFFECT: reduced amount (concentration) of fused areas on surface. 1 cl, 1 dwg
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Authors
Dates
2003-06-20—Published
2001-11-22—Filed