METHOD FOR PULSED-LASER PRODUCTION OF HIGH DIELECTRIC CONSTANT THIN-FILM MATERIALS Russian patent published in 2007 - IPC H01L21/316 

FIELD: semiconductor device technology.

SUBSTANCE: proposed method for pulsed-laser production of high dielectric constant thin-film materials for gate insulator of superhigh-speed MOS transistors includes pre-production of single-crystalline silicon substrate, formation of thin film from high dielectric constant materials basing on metal oxides by bombarding target made of this material with laser pulses causing spraying and deposition of its particles upon passing through rarefied medium of forming gas on substrate followed by laser heating of formed film; pre-production treatment is made by activating substrate surface with pulsed radiation of one ultraviolet laser at energy density up to 0.35 J/cm²; film is formed by target irradiating with aid of laser causing evaporation of film layer in two stages; first stage includes production of metal-oxide shielding film preventing silicon oxidation; during second step film thickness is brought to desired value at oxygen partial pressure up to 10 Pa and/or at substrate temperature of 400-600 °C followed by irradiation of formed film with laser at radiation density up to 0.4 J/cm².

EFFECT: enhanced effectiveness of producing mentioned film of desired parameters for use as gate insulator for superhigh-speed metal-oxide-semiconductor transistors.

6 cl, 1 tbl