FIELD: polymer materials.
SUBSTANCE: method of applying high-resolution image of functional layers, e.g. for applying lithographic mask or other functional layers, comprises polymerization of monomers from vapor phase under action of finely focused electron beam with energy 1 to 1000 keV followed by injection of monomer vapors at pressure from 10-4 to 10 torr. Electron beam is introduced into working chamber through a small opening in membrane, which enables avoiding scattering of electrons on membrane and, at the same time, maintaining monomer vapor pressure in working chamber high enough to ensure acceptable growth time for thickness (height) of image line. Preferred image applying conditions are the following: electron energy in electron beam 10 to 500 keV and monomer vapor pressure 0.001 to 10 torr. For electron beam diameter 50 nm, image width 100-150 nm can be obtained. When improving electron beam focusing, accessible electron beam diameter may be further diminished.
EFFECT: enabled high-resolution image of functional layers directly from monomer in single-step "dry" process without using any solvents.
2 cl, 2 dwg, 8 ex
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Authors
Dates
2005-02-27—Published
2002-11-11—Filed