FIELD: metallurgy, crystal growing.
SUBSTANCE: invention refers to semi-conductor technology of AIIIBV type compositions. The method is implemented by means of bombarding mono-crystalline plates of arsenide-indium with fast neutrons with following heating, annealing and cooling. The mono-crystalline plates are subject to bombardment with various degree of compensation at density of flow not more, than 1012 cm-2 c-1 till fluence F=(0.5÷5.0)·1015 cm-2 , while annealing is carried out at 850÷900°C during 20 minutes at the rate of heating and cooling 10 deg/min and 5 deg/min correspondingly.
EFFECT: production of arsenide-iridium plate with upgraded uniformity and thermal-stability of electro-physical characteristics and with decreased degree of compensation.
2 ex, 1 tbl
| Title | Year | Author | Number |
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| METHOD FOR PRODUCTION OF INDIUM AMMONIDE LARGE-SIZE MONOCRYSTALS | 2012 |
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