LIGHT-EMITTING DIODE Russian patent published in 2003 - IPC

FIELD: local lights, obstruction lights, video observation systems, high-speed and high-power photoelectric devices, therapeutic photoelectric apparatuses. SUBSTANCE: light-emitting diode designed to effectively use side emission of p-n junctions of chips has emitting chips with p-n junctions, side emission reflector coated with thin layer of silicone compound, and hemispherical dome of epoxy compound. Chips are installed so that they are in heat contact with base of diode case. Hemisphere diameter amounts to at least four diameters of reflector base with dome height to its spherical part radius ratio not over 1.8 and reflector to dome height ratio minimum 0.15 at inclination angle of reflector walls between 25 and 45 deg. EFFECT: enhanced light flux and radiation power of diode. 1 cl, 1 dwg, 2 tbl