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(19)

SU

(11)

1 819 488

(13)

A3

(51)

IPC

(21) (22)

Application

4941443/25, 1991-06-04

(22)

Actual filing date

1991-06-04

(45)

Published

1995-05-20

(72)

Inventor

Bogachev D.P.Kalinin Ju.M.Dneprovskij S.N.Vilisov A.A.Khan A.V.

(73)

Holder

Nauchno-Issledovatel'Skij Institut Poluprovodnikovykh Priborov

LIGHT-EMITTING DIODES Russian patent published in 1995 - IPC

Abstract SU 1819488 A3

FIELD: semiconductor devices. SUBSTANCE: irradiation concentrator is manufactured in the form of paraboloid which rear surface reflects radiation in direction of axis of diode and hemispherical lens in recession in front surface. Emitting crystal is located in focus common for lens and reflector. Relationship of dimensions of paraboloid and lens ensures concentration of irradiation in small solid angle. Antireflection coat is applied to rear surface with lens. EFFECT: improved operational characteristics of light-emitting diode. 1 dwg

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SU 1 819 488 A3

Authors

Bogachev D.P.

Kalinin Ju.M.

Dneprovskij S.N.

Vilisov A.A.

Khan A.V.

Dates

1995-05-20—Published

1991-06-04—Filed

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