SEMICONDUCTOR EMITTING DIODE Russian patent published in 2002 - IPC

FIELD: optoelectronics; optical and optoelectronic systems for various industries. SUBSTANCE: diode may be used to produce high- power sources of electromagnetic radiation in infrared and visible spectrums for miscellaneous optoelectronic systems. Diode has multiple-mesa p-n chip and ohmic contacts conducting current to n and p regions, as well as light emitting lens whose planar base is larger in size than chip surface. Light-emitting lens is mounted through its base on chip surface; light-emitting surface of chip has matrix-forming grooves; one of ohmic contacts is made in the form of evaporated-metal layer provided in matrix grooves and over perimeter of light-emitting surface of chip. Provision is made for expanding evaporated-metal layer on lens base not occupied by chip. EFFECT: enhanced emissive power. 4 cl, 4 dwg