FIELD: manufacture of optoelectronic devices including photoelectric solar cells. SUBSTANCE: process for manufacturing n+-p-p+-structure solar cells includes following operations: covering of rear side of silicon wafer with boron-doped p+ layer by concurrent diffusion of boron and phosphor during heat treatment of silicon wafer with its rear and face sides covered with boron-silicate and phosphor-silicate films, respectively; removal of silicon layer and texturing on face side during single process; covering of p+ layer obtained on rear side of silicon wafer with shielding layer concurrently with phosphor diffusion to obtain n+ layer on face side of silicon wafer; formation of phosphor-doped n+- layer on face side of silicon wafer by phosphor diffusion from applied source; removal of mentioned shielding layer, and formation of contacts. Proposed process ensures minimum 90% yield and cell efficiency up to 17%. EFFECT: enhanced yield of process and efficiency of solar cell. 1 cl, 1 dwg
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Authors
Dates
2003-08-10—Published
2002-04-17—Filed