METHOD FOR PRODUCING THICK-FILM, LOW- CONTACT-RESISTANCE CONTACT FOR SILICON SOLAR CELLS Russian patent published in 1999 - IPC

Abstract RU 2139600 C1

FIELD: optoelectronic devices including solar cells. SUBSTANCE: after thick-film contact is formed, it is covered with metal layer using, for example, electrolytic or chemical deposition technique. While being deposited, film covers contact and at the same time reaches substrate surface on its periphery forming reliable electrical connection with it. In the process, structure and properties of thick-film contact do not change and contact resistance is reduced due to deposited film. EFFECT: improved reliability and reduced contact resistance. 2 cl, 1 dwg

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RU 2 139 600 C1

Authors

Zaks M.B.

Kolomoets G.Ju.

Pinov A.B.

Sitnikov A.M.

Solodukha O.I.

Dates

1999-10-10Published

1998-12-04Filed