FIELD: physics.
SUBSTANCE: method involves depositing a phosphorus-containing 3 and a boron-containing 2 film, respectively, onto a first and a second opposite surface of a silicon substrate 1; simultaneous diffusion of phosphorus and boron from the corresponding films in the surface of the first and second sides of the substrate 1, respectively, at high temperature; removing the surface layer 4 which is doped with phosphorus, while simultaneously forming a textured surface on the first side of the substrate 1; forming a phosphorus-doped layer 7 on the textured surface and forming a contact system 8. Content of phosphorus in the phosphorus-containing film 3 is selected such that concentration of phosphorus on all areas of the surface coated with the phosphorus-containing film 3 is higher than concentration of boron on these areas after diffusion.
EFFECT: high efficiency of solar cells owing to elimination of the layer overlapping effect.
7 cl, 2 dwg, 3 tbl, 2 ex
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR MANUFACTURING n-p-p STRUCTURE SOLAR CELL | 1998 |
|
RU2139601C1 |
SOLAR CELL MANUFACTURING PROCESS | 2002 |
|
RU2210142C1 |
PHOTOELECTRIC CONVERTER (VERSIONS) AND METHOD OF MAKING SAID CONVERTER (VERSIONS) | 2008 |
|
RU2419180C2 |
STRUCTURE AND METHOD OF MAKING SILICON PHOTOCONVERTER WITH TWO-SIDED PHOTOSENSITIVITY | 2009 |
|
RU2432639C2 |
METHOD FOR PRODUCING THICK-FILM, LOW- CONTACT-RESISTANCE CONTACT FOR SILICON SOLAR CELLS | 1998 |
|
RU2139600C1 |
PHOTO ELECTRIC CONVERTER (VERSIONS) AND METHOD OF ITS FABRICATION (VERSIONS) | 2009 |
|
RU2417481C2 |
SILICON-BASED DOUBLE-SIDED HETEROJUNCTION PHOTOVOLTAIC CONVERTER | 2021 |
|
RU2757544C1 |
SOLAR CELL, SOLAR CELL FABRICATION METHOD AND SOLAR CELL MODULE | 2010 |
|
RU2532137C2 |
SOLAR CELL | 2015 |
|
RU2590284C1 |
DEVICE AND METHOD OF MAKING DOUBLE-SIDED SILICON MATRIX SOLAR CELL | 2015 |
|
RU2606794C2 |
Authors
Dates
2012-12-10—Published
2011-06-23—Filed