STRUCTURE AND METHOD OF MAKING SILICON PHOTOCONVERTER WITH TWO-SIDED PHOTOSENSITIVITY Russian patent published in 2011 - IPC H01L31/04 H01L31/18 

FIELD: physics.

SUBSTANCE: in a silicon photoconverter with two-sided photosensitivity, whose thickness is comparable to minority carrier diffusion length in the base region, having a n⁺-p (p⁺-n) junction at the front side, an isotype p-p⁺ (n-n⁺) junction in the base region at the backside, an antireflection film and a metal contact grid on the front side and backside, the antireflection film is such that intrinsic electric charge density is not less than 1.10¹¹ cm^-2, the sign of this charge is the same as that of majority carriers in the base region, wherein the n⁺-p (p⁺-n) junction and the isotype p-p⁺ (n-n⁺) junction under the contact grid is at a greater depth than in intermediate contact grids. Also disclosed are one more version and two versions of the method.

EFFECT: high efficiency and low cost of making photoconverters.

14 cl, 6 dwg, 6 ex