FIELD: computer engineering. SUBSTANCE: dynamic-memory cascaded integrated module is made in the form of flip-flop and has cascaded links of dynamic-memory integrated module and decoder; it also has cascaded input links of one dynamic-memory module built of two executable switches semiconductor incorporating one controlled-signal intermediate input bus, two controlled- signal intermediate input buses, two controlled-signal intermediate output buses, and two separate controlled-signal buses each being linked with one of mentioned executable semiconductor switches. Each of controlled-signal intermediate output buses of next dynamic-memory module in each cascaded link is connected to controlled-signal intermediate input bus of dynamic-memory module of next cascaded link, and executable semiconductor switches of output cascaded link are switched over to decoder. EFFECT: facilitated computer-aided design; enlarged functional capabilities. 1 cl, 5 dwg, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
INTEGRATED STAGE LOGIC MODULE | 2001 |
|
RU2215368C2 |
BASE AMPLIFICATION ELEMENT OF DIFFERENTIAL DYNAMIC LOGIC ( VERSIONS ) | 1999 |
|
RU2154338C1 |
PARAPHASE CASCADE LOGIC DEVICE BUILT AROUND CMIS TRANSISTORS | 2002 |
|
RU2209507C1 |
COMPLEMENTARY MICRO-ELECTRO-MECHANICAL INVERTER | 2005 |
|
RU2290753C1 |
PARAPHASAL LOGIC ELEMENT BUILT AROUND MIS TRANSISTORS | 1995 |
|
RU2107387C1 |
METHOD OF THE INCREASED RELIABILITY MODULAR POWER SUPPLY SOURCE CONSTRUCTION AND MODULAR POWER SUPPLY SOURCE | 2017 |
|
RU2663238C1 |
PARA-PHASE LOGICAL ELEMENT BASED ON SHORT-CHANNEL MIS TRANSISTORS | 2003 |
|
RU2258303C1 |
MEMORY CELL OF STATIC STORAGE DEVICE | 2012 |
|
RU2507611C1 |
MULTI-PORT CELL OF OPERATING MEMORY DEVICE | 2017 |
|
RU2665248C1 |
REDUNDANT SOURCE OF CURRENT | 2013 |
|
RU2512890C1 |
Authors
Dates
2003-12-10—Published
2001-08-14—Filed