MULTI-PORT CELL OF OPERATING MEMORY DEVICE Russian patent published in 2018 - IPC G11C11/40 

FIELD: computer engineering.

SUBSTANCE: invention relates to computer engineering. Random access memory cell comprises three in series connected inverters, and a first write-through data write key for writing data to a cell from a first input bit line, a second write-through data write key for writing data to a cell from a second input bit line, complementary passkey for transmitting data from the cell to the first output line, complementary to the passkey for transmitting data from the cells to the second output bus, complementary to the bypass rewrite key, controlled by the fourth inverter and the four-input circuit 2AND-2OR-NOT.

EFFECT: technical result consists in increasing the range of the output voltage of the cell to the level of the supply voltage while maintaining increased fault tolerance, increasing the load capacity of the cell, and the voltage of the output signal.

1 cl, 2 dwg