SEMICONDUCTOR POWER MODULE Russian patent published in 2004 - IPC

FIELD: power electronics. SUBSTANCE: semiconductor power module assembled of separate integrated circuits has case accommodating substrate, at least two semiconductor integrated circuits each provided with two electrodes, and contact piston. First main electrodes are in electric contact with substrate and second ones, with contact piston. Current conducting layer provided between first main electrode and substrate and/or between second main electrode and contact piston is of material that forms, together with semiconductor material, compound or alloy whose melting point is below that of semiconductor material. Module has small surface area and is characterized in that occurrence of short circuit in any of its integrated circuits will not cause failure of module as a whole. EFFECT: reduced space requirement; enhanced operating reliability. 5 cl, 1 dwg